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A nanostructured gate dielectric may have addressed the most significant obstacle to expanding the use of organic semiconductors for thin-film transistors. The structure, composed of a fluoropolymer layer followed by a nanolaminate made from two metal oxide materials, serves as gate dielectric and simultaneously protects the organic semiconductor — which had previously been vulnerable to damage from the ambient environment — and enables the transistors to operate with unprecedented stability. The new structure gives thin-film transistors stability comparable to those made with inorganic materials, allowing them to operate in ambient conditions — even underwater. Organic thin-film transistors can be made inexpensively at low temperature on a variety of flexible substrates using techniques such as inkjet printing, potentially opening new applications that take advantage of simple, additive fabrication processes. “We have now proven a geometry that yields lifetime performance that for the first time establish that organic circuits can be as